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| SI4412ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.024 @ VGS = 10 V 0.035 @ VGS = 4.5 V ID (A) 8 6.6 DD DD SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4412ADY SI4412ADY-T1 (with Tape and Reel) 8 7 6 5 D D D D N-Channel MOSFET G S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 8 Steady State Unit V 5.8 4.6 30 A 1.2 1.3 0.8 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 6.4 2.3 2.5 1.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71105 S-03951--Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 45 80 16 Maximum 50 95 20 Unit _C/W C/W 2-1 SI4412ADY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 8 A VGS = 4.5 V, ID = 6.6 A VDS = 15 V, ID = 8 A IS = 2.3 A, VGS = 0 V 30 0.020 0.029 21 0.75 1.1 0.024 0.035 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 15 6 26 10 40 VDS = 15 V, VGS = 10 V, ID = 2 A 16 3 1.5 2.0 20 12 50 20 80 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 30 Transfer Characteristics 24 VGS = 10 thru 5 V I D - Drain Current (A) 18 4V 24 I D - Drain Current (A) 18 12 12 TC = - 125_C 6 25_C - 55_C 6 3V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS - Gate-to-Source Voltage (V) Document Number: 71105 S-03951--Rev. B, 26-May-03 2-2 SI4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 1200 Capacitance C - Capacitance (pF) 0.04 1000 Ciss 0.03 VGS = 4.5 V VGS = 10 V 800 600 0.02 400 Coss 0.01 200 Crss 0 6 12 18 24 30 0.00 0 6 12 18 24 30 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 2 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 4 8 12 16 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) - On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 0.08 0.06 ID = 3.9 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71105 S-03951--Rev. B, 26-May-03 www.vishay.com 2-3 SI4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 Power (W) 40 30 - 0.2 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 80_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71105 S-03951--Rev. B, 26-May-03 |
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